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High Frequency Simulations for the Meander Type Inductors on the MgO and Al2O3 Substrates

산화마그네슘 기판과 산화알루미늄 기판을 이용한 Meander 형태 인덕터의 고주파 시뮬레이션

  • 함용수 (광운대학교 전자재료공학과) ;
  • 김성훈 (광운대학교 전자재료공학과) ;
  • 강이구 (극동대학교 컴퓨터시스템표준학과) ;
  • 고중혁 (광운대학교 전자재료공학과)
  • Published : 2009.08.01

Abstract

We have studied on the microwave characteristics for the meander type inductors on the MgO substrates and $Al_2O_3$ substrates by employing 3-D high frequency simulation, respectively. Proper designs of meander type inductors were proposed and confirmed through the high frequency simulations, 5, 7, 9, 11, and 13 turns meander type inductors have been choose to analyze the electrical properties for the microwave passive component applications. The Al top electrodes have 282 nm length, 45 nm width, 100 nm thickness and 15 nm gap. The simulations were carried out from 50 MHz to 30 GHz, Frequency dependent inductances and quality factor were calculated by employing the equivalent circuit model of meander type inductors. The self resonances frequency of meander type inductor were shifted from high frequency to low frequency range as the number of the turn of inductors was increased. From the microwave simulations, the inductances and quality factors of meander type inductors were extracted through the scattering parameter.

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