CHARACTERISTICS EVALUATION AND GROWTH OF $BI_4GE_3O_{12}$ SINGLE CRYSTAL BY CZOCHRALSKI METHOD

  • Cho, Yun-Ho (Department of Nuclear Engineering, Hanyang University) ;
  • Kim, Yong-Kyun (Department of Nuclear Engineering, Hanyang University) ;
  • Lee, Woo-Gyo (Department of Nuclear Engineering, Hanyang University) ;
  • Kang, Byoung-Hwi (Department of Nuclear Engineering, Hanyang University) ;
  • Kim, Jong-Kyung (Department of Nuclear Engineering, Hanyang University) ;
  • Lee, Dong-Hoon (Department of Nuclear Engineering, Hanyang University) ;
  • Park, Jae-Woo (Department of Nuclear and Energy Engineering, Cheju University)
  • Published : 2009.06.30

Abstract

The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $\gamma$-rays from $^{241}Am$, $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{137}Cs$ and $^{54}Mn$ radio-isotopes. The energy resolution of grown BGO, $\Delta$E/E, was estimated to be 12.1% at 662 keV of $\gamma$-ray for $^{137}Cs$ nuclide. Compared to the commercial BGO crystal, we confirmed that the grown BGO has a good performance and is comparable to reference one.

References

  1. Schmid F, Khattak CP, and Smith MB. Growth of bismuth germanate crystals by the heat exchanger method. J. Crystal Growth 1984;70:446-470 https://doi.org/10.1016/0022-0248(84)90303-8
  2. Murthy RVA, Ravikumar M, Choubey A, Lal K, Kharachenko L, Shleguel V, and Guerasimov V. Growth and characterization of large-size bismuth germinate single crystals by low thermal gradient Czochralski method. J. Crystal Growth 1999;197:865-873 https://doi.org/10.1016/S0022-0248(98)01256-1
  3. Kozma P and Kozma P Jr. Radiation resistivity of BGO crystals due to low-energy gamma-rays. Nucl. Instr. and Meth. A 2003;501:499-504 https://doi.org/10.1016/S0168-9002(03)00617-X
  4. Takagi K and Fukazawa T. Effect of growth conditions on the shape of $Bi_{4}Ge_{3}O_{12}$ single crystals and melt flow patterns. J. Crystal Growth 1986;76:328-338 https://doi.org/10.1016/0022-0248(86)90379-9
  5. Takagi K, Oi T, Fukazawa T, Ishii M and Akiyama S. Improvement in the scintillation conversion efficiency of$Bi_{4}Ge_{3}O_{12}$single crystals. J. Crystal Growth 1981;52:584- 587 https://doi.org/10.1016/0022-0248(81)90345-6
  6. Vaithianathan V, Kumaragurubaran S, Santhanaraghavan P, Muralidhar N, Kumar R, Sinha AK, Ramasamy P and Nagarajan T, Growth and structural study of bismuth germinate single crystal and its energy resolution. Mater Chem Phys. 2002;74:121-125 https://doi.org/10.1016/S0254-0584(01)00413-8
  7. Hu G, Wang S, Li Y, Xu L and Li P. The influence of temperature gradient on energy resolution of $Bi_{4}Ge_{3}O_{12}$(BGO) crystal. Ceram. Int. 2004;30:1665-1668 https://doi.org/10.1016/j.ceramint.2003.12.157
  8. DOH SH. Growth and Radiation Damage of BGO Single Crystals. 951-0202-050-1. KOSEF. 1996;1-10