A Study on the Characteristic of n-ZnO:In/p-Si (111) Heterostructure by Pulsed Laser Deposition

PLD 법으로 증착된 n-ZnO:In/p-Si (111) 이종접합구조의 특성연구

  • 장보라 (한국해양대학교 나노반도체공학과) ;
  • 이주영 (한국해양대학교 나노반도체공학과) ;
  • 이종훈 (한국해양대학교 나노반도체공학과) ;
  • 김준제 (한국해양대학교 나노반도체공학과) ;
  • 김홍승 (한국해양대학교 나노반도체공학과) ;
  • 이동욱 (동의대학교 나노공학과) ;
  • 이원재 (동의대학교 나노공학과) ;
  • 조형균 (성균관대학교 신소재공학과) ;
  • 이호성 (경북대학교 신소재공학과)
  • Published : 2009.05.01


ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.


  1. W. W. Wenas, A. Yamada, and K. Takahashi, 'Electrical and optical properties of boron-doped ZnO thin films for solar cells grown by metal organic chemical vapor deposition', J. Appl. Phys., Vol. 70, p. 7119, 1991
  2. P. Zu, Z. K. Tang, G. K. L Wang, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, 'Ultraviolet spontaneous and stimulated emission from ZnO microcrystallite thin film at room temperature', Solid State Comm., Vol. 103, p. 459, 1997
  3. Ataev B. M., Bagamadova A. M., Djabrailov A. M., Mamedo V. V., and Rabadanov R. A., 'Highly conductive and transparent Ga- doped epitaxial ZnO films on sapphire by CVD', Thin Solid Films, Vol. 260, p. 19, 1995
  4. Ko H. J., Chen Y. F., Hong S. K., Wenisch H., Yao T., and Look D. C., 'Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy', Appl. Phys. Lett., Vol. 77, p. 3761, 2000
  5. Z. Z. Ye, J. G. Lu, Y. Z. Zhang, Y. J. Zeng, L. L. Chen, F. Zhuge, G. D. Yuan, H. P. He, L. P. Zhu, J. Y. Huang, and B. H. Zhao, 'ZnO light-emitting diodes fabricated on Si substrates with homo buffer layers', Appl. Phys. Lett., Vol. 91, p. 113503, 2007
  6. F. K. Shan, B. C. Shin, S. W. Jang, and Y. S. Yu, 'Substrate effects of ZnO thin films perpared by PLD technique', J. Euro. Cera. Soci., Vol. 24, p. 1015, 2004
  7. M. Caglar, Y. Caglar, and S. Ilican, 'Electrical and optical property of undoped ZnO and In doped ZnO', Phys. Stat. Sol., (c) 4, Vol. 3, p. 1337, 2007
  8. R. K. Gupta, K. Ghosh, R. Patel, S. R. Mishra, and P. K. Kahol, 'Band gap engineering of ZnO thin films by $In_2O_3$ incorporation', J. Crys. Grow., Vol. 310, p. 3019, 2008
  9. X. Peng, H. Zang, Z. Wang, J. Xu, and Y. Wang, 'Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering', J. Lumin., Vol. 128, p. 328, 2008
  10. K. J. Chen, F. Y. Hung, S. J. Chang, and Z. S. Hu, 'Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol-gel method', Appl. Surf. Scie., 2008(in press)
  11. Z. P. Wei, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. Yao, B. H. Li, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, 'Fabrication of nitrogen doped p-ZnO and ZnO light emitting diodes on sapphire', J. Kore. Phys. Soci., Vol. 53, p. 3038, 2008
  12. W. Z. Xu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, B. H. Zhao, L. Jiang, J. G. Lu, and H. P. He, 'ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition', Appl. Phys. Lett., Vol. 88, p. 173506, 2006