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The Solid-electrolyte Characteristics of Ag-doped Germanium Selenide for Manufacturing of Programmable Metallization Cell

Programmable Metallization Cell 제작을 위한 Ag-doped Germanium Selenide의 고체전해질 특성

  • 남기현 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2009.05.01

Abstract

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

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