DOI QR코드

DOI QR Code

A Study on Pad Profile Variation using Kinematical Analysis on Swing Arm Conditioner

스윙 암 컨디셔너의 기구학적 해석을 통한 CMP 패드 프로파일 변화에 관한 연구

  • 오지헌 (부산대학교 기계공학과 정밀기계공학 CMP LAB.) ;
  • 이상직 (부산대학교 기계공학과 정밀기계공학 CMP LAB.) ;
  • 이호준 (부산대학교 기계공학과 정밀기계공학 CMP LAB.) ;
  • 조한철 (부산대학교 기계공학과 정밀기계공학 CMP LAB.) ;
  • 이현섭 (부산대학교 기계공학과 정밀기계공학 CMP LAB.) ;
  • 김형재 (한국생산기술연구원 초정밀복합가공팀) ;
  • 정해도 (부산대학교 기계공학과 정밀기계공학 CMP LAB.)
  • Published : 2008.11.01

Abstract

There are many factors to affect polishing performance normally in chemical mechanical polishing (CMP) process. One of the factors is a pad profile. A pad profile has not been considered as a significant factor. However, a pad profile is easily changed by conditioning process in CMP, and then changed pad profile affects polishing performance. Therefore, understanding how the pad profile is changed by conditioning process is very important. In this paper, through the simulation based on kinematic analysis, the variation of the pad profile was described in accordance with difference condition of conditioning process. A swing-arm type conditioner was applied in this simulation. A swing-arm type conditioner plays a role of generating asperities on pad surface. The conditions of conditioing process to get uniform removal were also investigated by comparing the simulation with the experiment.

References

  1. B. J. Hooper, G. Byrne, and S. Galligan, "Pad conditioning in chemical mechanical polishing", Journal of Materials Processing Technology, Vol. 123, p. 107, 2002 https://doi.org/10.1016/S0924-0136(01)01137-2
  2. F. W. Preston, "The theory and design of plate glass polishing machines", Journal of the Society of Glass Technology, Vol. 11, p. 214, 1927
  3. K. Achuthan, J. Curry, M. Lacy, D. Campbell, and S. V. Babu, "Investigation of pad deformation and conditioning during the CMP of silicon dioxide films", Journal of Electronic materials, Vol. 25, No. 10, p. 1628, 1996 https://doi.org/10.1007/BF02655587
  4. Q. Luo, S. Ramarajan, and S. V. Babu, "Modification of the preston equation for the chemical-mechanical pollishing of copper", Thin Solid Film, Vol. 335, Issues 1-2, p. 160, 1998 https://doi.org/10.1016/S0040-6090(98)00896-7
  5. S. J. Lee, W. K. Shin, and K. H. Park, "Kinematical approach on pad surface profile induced by pad conditioning in CMP", p. 75, ASPEN2007.
  6. H. J. Kim, H. Y. Kim, and H. D. Jeong, "Kinematic analysis of chemical mechanical polishing and its effect on polishing results", Key Engineering Materials, Vol. 238, p. 229, 2003 https://doi.org/10.4028/www.scientific.net/KEM.238-239.229
  7. W. M. Jang, H. J. Kim, and H. D Jeong, "Mathematical modeling of CMP conditiong process", Micro Electronic Engineering, Vol. 84, p. 557, 2007
  8. Carolina L. Elmufdi and Gregory P. Muldowney, "The impact of diamond conditioning on surface contact in CMP pads", Material Research Society, Vol. 991, 0991-C01-02, 2007