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A Study on the Embedded Capacitor for High Frequency Decoupling

고주파용 디커플링 임베디드 캐패시터에 관한 연구

  • 홍근기 (서울대학교 반도체공동연구소) ;
  • 홍순관 (혜전대학 디지털전자과)
  • Published : 2008.08.31

Abstract

We proposed an embedded capacitor with the unique electrode structure, which electrodes are located on the same plane and dielectric gap was formed by electrodes. We named it 'Gap type EC', and it was analyzed by the FEM(Finite element Method) program tool. The resonant frequency of Cap type EC was obtained at more higher frequency region. Also, resonant frequency was changed with the magnitude and thickness of electrodes. The Gap type EC with the dielectric gap of $50{\mu}m$ showed capacitance density of $55pF/cm^2$. This value is the higher than that of conventional EC. So, we concluded that the Gap type EC can be a good candidate for high frequency decoupling.

Keywords

Embedded Capacitor;ESL;ESR;Resonant Frequency

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