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Comparison of the Electrical and Optical Properties in between Transparent ITO and Au Electrodes using Hydrogen-storage Metals as Intermediate Layers

수소저장합금을 이용한 p-GaN ITO 투명전극과 Au 전극과의 특성비교

  • 채승완 (고려대학교 전기전자공학과) ;
  • 김철민 (고려대학교 전기전자공학과) ;
  • 김은홍 (고려대학교 전기전자공학과) ;
  • 이병규 (고려대학교 전기전자공학과) ;
  • 신영철 (고려대학교 전기전자공학과) ;
  • 김태근 (고려대학교 전기전자공학과)
  • Published : 2008.07.01

Abstract

In this work, the electrical and optical properties of the two different p-type GaN electrode schemes, ZnNi/ITO and ZnNi/Au, were compared each other, and applied to the top-emitting GaN/InGaN light-emitting diodes (LEDs). The ZnNi/ITO electrode showed much higher transmittance (90%) and slightly lower contact resistance $(1.27{\times}10^{-4}{\Omega}cm^2)$ than those (77%, $(2.26{\times}10^{-4}{\Omega}cm^2)$) of the ZnNi/Au at a wavelength of 460 nm. In addition, GaN LEDs having ZnNi/ITO showed accordingly higher light output power and luminous intensity than those having ZnNI/Au did at the current levels up to 1 A.

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