DOI QR코드

DOI QR Code

Photoluminescence of Neutron-irradiated GaN Films and Nanowires

  • Seong, Ho-Jun (Department of Electrical Engineering, Korea University) ;
  • Yeom, Dong-Hyuk (Department of Electrical Engineering, Korea University) ;
  • Kim, Hyun-Suk (Department of Electrical Engineering, Korea University) ;
  • Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
  • Published : 2008.07.01

Abstract

Photoluminescence (PL) of neutron-irradiated GaN films and nanowires is investigated in this study. The GaN films and nanowires were irradiated by neutron beams in air at room temperature, and the neutron-irradiated films and nanowires were annealed in an atmosphere of $NH_3$ at temperatures ranging from 500 to $1100^{\circ}C$. The line-shapes of the PL spectra taken from the neutron-irradiated GaN films and nanowires were changed differently with increasing annealing temperature. In this study, light-emitting centers created in the neutron-irradiated GaN films and nanowires are examined and their origins are discussed. In addition, it is suggested here that the neutron-transmutation-doping is a simple and useful means of homogeneous impurity doping into nanowires with control of the doping concentration.

References

  1. E. D. Wheeler, J. L. Boone, J. W. Farmer, and H. R. Chandrasekha, 'Neutron transmutation doping as an experimental probe for AsSe in ZnSe', Phys. Rev. B, Vol. 53, p. 15617, 1996 https://doi.org/10.1103/PhysRevB.53.15617
  2. J. Liu and P.-X. Wang, 'Photoluminescence study of the defects induced byneutron irradiation and rapid annealing in semi-insulating GaAs', J. Appl. Phys., Vol. 86, p. 764, 1999 https://doi.org/10.1063/1.370801
  3. J. V. Patal, J. G. Williams, and G. E. Stillman, 'Degradation of mobility in neutron irradiated GaAs by the increased scattering from multiply charged ionized defects', J. Appl. Phys., Vol. 73, p. 3734, 1993 https://doi.org/10.1063/1.352904
  4. M. A. Vesaghi, 'Electrical properties of neutron-transmutation-doped GaAs below 450 K', Phys. Rev. B, Vol. 25, p. 5436, 1982 https://doi.org/10.1103/PhysRevB.25.5436
  5. H. Hamanaka, K. Kuriyama, M. Yahagi, M. Satoh, K. Iwamura, C. Kim, F. Shiraishi, K. Tsuji, and S. Minomura, 'Doping of phosphorus in hydrogenated amorphous silicon by a neutron transmutation doping technique', Appl. Phys. Lett., Vol. 45, p. 786, 1984 https://doi.org/10.1063/1.95366
  6. K. Kuriyama, M. Yahagi, K. Iwamura, C. Kim, and Y. Kim, 'Annealing effects on electrical properties of thermal neutron transmutation doped Ge', J. Appl. Phys., Vol. 54, p. 673, 1984 https://doi.org/10.1063/1.332074
  7. A. A. Homs and B. Mari, 'Photoluminescence of undoped and neutron-transmutation-doped InSe', J. Appl. Phys., Vol. 88, p. 4654, 2000 https://doi.org/10.1063/1.1308066
  8. J. E. Mueler, W. Kellner, H. Kniepkamp, E. W. Hass, and G. Fishcher, 'Doping of semi-insulating and n-type GaAs by neutron transmutation', J. Appl. Phys., Vol. 51, p. 3178, 1980 https://doi.org/10.1063/1.328068
  9. K. Kuriyama, T. Tokumasu, J. Takahashi, H. Kondo, and M. Okada, 'Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN', Appl. Phys. Lett., Vol. 80, p. 3328, 2002 https://doi.org/10.1063/1.1477269
  10. S. H. Park, T. W. Kang, and T. W. Kim, 'Effect of annealing on neutron-transmutation- doped GaN epilayers grown on sapphire substrates', J. Mater. Sci., Vol. 39, p. 3217, 2004 https://doi.org/10.1023/B:JMSC.0000025864.93045.5f
  11. L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, 'Epitaxial core-shell and core-multishell nanowire heterostructures', Nature, Vol. 420, p. 57, 2002 https://doi.org/10.1038/nature01141
  12. S.-K. Lee, H.-J. Choi, P. Pauzauskie, P. Yang, N.-K. Cho, H.-D. Park, E.-K. Suh, K.-Y. Lim, and H.-J. Lee, 'Gallium nitride nanowires with a metal initiated metal- organic chemical vapor deposition (MOCVD) approach', Phys. Stat. Sol. (b), Vol. 241, p. 2775, 2004 https://doi.org/10.1002/pssb.200404989
  13. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. Smith, and C. M. Lieber, 'Growth of nanowire superlattice structures for nanoscale photonics and electronics', Nature, Vol. 415, p. 617, 2002 https://doi.org/10.1038/415617a
  14. X. Li, D. V. Forbes, S. Q. Gu, D. A. Turnhold, S. G. Bishop, and J. J. Coleman, 'A new buffer layer for MOCVD growth of GaN on sapphire', J. Electron. Mater., Vol. 24, p. 1711, 1995 https://doi.org/10.1007/BF02676838
  15. J. I. Pankove, 'Optical Process in Semi- conductors', Dover, New York, p. 14, 1975
  16. S. J. Pearton, 'GaN and Related Materials II', Golden and Breach Science, Amsterdam, p. 192, 2000
  17. H. W. Seo, S. Y. Bae, J. Park, H. Yang, K. S. Park, and S. Kim, '18_Strained gallium nitride nanowires', J. Chem. Phys., Vol. 116, p. 9492, 2002 https://doi.org/10.1063/1.1475748