Fabrication and Electrical Properties of SiC MIS Structures using Aluminum Oxide Thin Film

산화알루미늄 박막을 이용한 SiC MIS 구조의 제작 및 전기적 특성

  • 최행철 (청주대학교 전자정보공학부) ;
  • 정순원 (한국전자통신연구원 IT융합.부품연구소) ;
  • 정상현 (청주대학교 전자정보공학부) ;
  • 윤형선 (청주대학교 전자정보공학부) ;
  • 김광호 (청주대학교 전자정보공학부)
  • Published : 2007.10.01


Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.


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