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A Study on the Realization of the High Efficiency LCD Photoresist Removal Technology

고효율 LCD 감광막 제거기술 구현 연구

  • 손영수 (한국기계연구원 지능형생산시스템연구본부) ;
  • 함상용 (한국기계연구원 지능형생산시스템연구본부) ;
  • 김병인 (한국기계연구원 지능형생산시스템연구본부) ;
  • 이성휘 (한국기계연구원 지능형생산시스템연구본부)
  • Published : 2007.11.01

Abstract

The realization of the photoresist(PR) removal method with vaporized water and ozone gas mixture has been studied for the LCD TFT array manufacturing. The developed PR stripper uses the water boundary layer control method based on the high concentration ozone production technology. We develop the prototype of PR stripper and experiment to find the optimal process parameter condition like as the ozone gas flow/concentration, process reaction time and thin boundary layer formation. As a results, we realize the LCD PR strip rate over the 0.4 ${\mu}m/min$ and this PR removal rate is more than 5 times higher than the conventional immersion type ozonized water process.

References

  1. Bruno Langlais David A., 'Ozone in Water Treatment; Application and Engineering', American Water Works Association Research Foundation, 1991
  2. J. K. Tong, 'Cleaning Technology in Semiconductor Device Manufacturing', J. Ruzyllo and R. E. Novak, Editors, PV 92-12, p. 18, The Electrochemical Society Proceedings series, Pennington, NJ, 1992
  3. S. Nelson, 'Ozonated Water for Wafer Cleaning and Photoresist Removal', Solid State Technology, p. 107, 1999
  4. J. Cheng and D. Nemeth, 'The Study of Temperature Effect in Photoresist Stripping with DIO3 Process', Technical Report, Akrion, Allentown, PA, 1999
  5. M. B. Chang, 'Experimental study on ozone synthesis via dielectric barrier discharge', Ozone Science and Engineering, Vol. 19, p. 241. 1997 https://doi.org/10.1080/01919519708547304
  6. S. De Gendt, J. Wauters, and M. Heyns, 'A Novel Resist and Post-etch Residue Removal process using Ozonated Chemistry', Solid State Technology, p. 57, 1998
  7. T. Abe and S. Ojima, 'Photoresist stripping using alkaline accelerator containing wetvapor', Solid State Phenomena, Vols. 76-77, p. 231, 2001 https://doi.org/10.4028/www.scientific.net/SSP.76-77.231
  8. H. Abe and H. Iwamoto, 'Novel photoresist stripping technology using ozone/vapor water mixture', IEEE Trans. on semiconductor Manufacturing, Vol. 16, No. 3, p. 401, 2003 https://doi.org/10.1109/TSM.2003.815620
  9. 손영수, 함상용, '오존/증기 혼합물을 이용한 고효율 반도체 감광막 제거기술', 한국전기전자재료학회 2006추계학술대회논문집, 19권, p. 22, 2006
  10. 손영수, '오존공정을 이용한 고효율 PR 제거 기술 연구', 대한전자공학회논문지, 44권, SD편, 1호, p. 22, 2007