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Dependences of Various Substrate Temperature on the Structural and Electrical Properties of ZnO Thin Films deposited by RF Magnetron Sputtering

RF 마그네트론 스퍼터링법으로 증착한 ZnO 박막의 증착온도에 따른 구조 및 전기적 특성

  • 오수영 (성균관대학교 정보통신공학부) ;
  • 김응권 (성균관대학교 정보통신공학부) ;
  • 이태용 (성균관대학교 정보통신공학부) ;
  • 강현일 (성균관대학교 정보통신공학부) ;
  • 이종환 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Published : 2007.11.01

Abstract

In this study we investigated the variation of the substrate temperatures using RF sputtering to identify the effect on the structure and electrical properties by c-axis orientation of ZnO thin film. ZnO thin films were prepared on Al/Si substrate. In our experimental results, ZnO thin film at $300^{\circ}C$ was well grown with (002) peak of ZnO thin film, the thin film showed the high resistivity with the value of $5.9{\times}10^7\;{\Omega}cm$ and the roughness with 27.06 nm. As increased the substrate temperatures, the grain size of ZnO thin films was increased. From these results, we could confirm the suitable substrate temperature of ZnO thin films for FBAR(film bulk acoustic resonator).

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