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Characteristics of the 2-D SSIMT using a CMOS Process

CMOS 공정을 이용한 2차원 SSIMT의 특성

  • 송윤귀 (부경대학교 전자공학과) ;
  • 류지구 (부경대학교 전자공학과)
  • Published : 2007.08.01

Abstract

A novel 2-Dimensional Suppressed Sidewall Injection Magnetotransistor (SSIMT) with high linearity has been fabricated on the standard CMOS technology and experimentally verified. The novel 2-Dimensional SSIMT overcomes the restriction of the standard CMOS technology. Experimental results of the fabricated 2-Dimensional SSIMT show that the variation of each collector output currents are extremely linear as a function of magnetic field from -200mT to 200mT at $I_B = 1 mA,\;V_{CE} = 5 V\;and\;V_{SE} = 5 V$. The relative sensitivity shows up to 13 %/T. The measured nonlinearity of the fabricated device is about 0.9%.

References

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