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A Study on Properties of ZnO:Al Films on Polyimide Substrate

Polyimide 기판을 이용한 ZnO:Al 박막 특성에 관한 연구

  • 이동진 (군산대학교 전자정보공학부) ;
  • 이재형 (군산대학교 전자정보공학부) ;
  • 주정훈 (군산대학교 전자정보공학부) ;
  • 이종인 (군산대학교 전자정보공학부) ;
  • 정학기 (군산대학교 전자정보공학부) ;
  • 정동수 (군산대학교 전자정보공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Published : 2007.08.01

Abstract

Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.

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