A Study on Properties of ZnO:Al Films on Polyimide Substrate

Polyimide 기판을 이용한 ZnO:Al 박막 특성에 관한 연구

  • 이동진 (군산대학교 전자정보공학부) ;
  • 이재형 (군산대학교 전자정보공학부) ;
  • 주정훈 (군산대학교 전자정보공학부) ;
  • 이종인 (군산대학교 전자정보공학부) ;
  • 정학기 (군산대학교 전자정보공학부) ;
  • 정동수 (군산대학교 전자정보공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Published : 2007.08.01


Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.


  1. Y. Igasaki and H. Saito, J. Appl, Phys., Vol. 69, p. 2190, 1991
  2. W. S. Lan and S. J. Fonash, J. Electron. Mater., Vol. 16, p. 141, 1987
  3. T. W. Choi and S. C. Yoo, 'Electrical and mechanical properties of ceramics', J. of KIEEME(in Korean), Vol. 15, No. 1, p. 10, 2001
  4. S. Hayamizu, H. Tabata, H. Tanakam, and T. Kawai, J. Appl, Phys, Vol. 80, p. 787, 1996
  5. B. H. Choi and H. B. IM., 'Optical and electrical properties of $Ga_2O_3$-doped ZnO films prepared by RF sputtering', Thin Solid Films, Vol. 193, p. 712, 1990
  6. N. H. March, 'The Electrical Characterization of Semiconductors; Majority Carriers and Electron States, Academic Press, Oxford, p. 16, 1992
  7. A. Van der Drift, Philips Res., Rep., Vol. 22, p. 267, 1967