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Electrical Properties of Multilayer Chip Varistors in the Response Surface Analysis

반응표면분석법에 의한 적층 칩 바리스터의 전기적 특성

  • 윤중락 (삼화콘덴서공업(주) 부설연구소) ;
  • 정태석 (삼화콘덴서공업(주) 부설연구소) ;
  • 최근묵 (삼화콘덴서공업(주) 부설연구소) ;
  • 이석원 (호서대학교)
  • Published : 2007.06.01

Abstract

In order to enhance sintering characteristics on the $ZnO-Pr_6O_{11}$ based multilayer chip varistors (MLVs), a response surface analysis using central composite design method were carried out. As a result, varistor voltage($V_{1mA}$), nonlinear coefficient ($\alpha$), leakage current ($I_L$) and capacitance (C) were considered to be mainly affected by sintered temperature and holding time. MLVs sintered at $1200^{\circ}C$ and above $1200^{\circ}C$ revealed poor electrical characteristics, possibly due to the reaction between electrode materials(Pd) and $ZnO-Pr_6O_{11}$ based ceramics. On the sintering temperature range $1150{\sim}1175^{\circ}C$, nonlinear coefficient ($\alpha$) and leakage current ($I_L$) were shown to be $60{\sim}69$ and below $0.3{\mu}A$, respectively. In particular, MLVs sintered at $1175^{\circ}C$, 1.5 hr and $2^{\circ}C/hr$ (cooling speed) showed stable ESD(Electrical Static Discharge) characteristics under the condition of 10 times at 8 Kv with deviation varistor voltage, and deviation nonlinear coefficient were 0.3% and 0.33% (at positive), 0.55% (at negative), respectively.

References

  1. N. Shohata, M. Nakanishi, and K. Utsumi, 'Mutlilayer ceramic chip varistor', p. 329 in Ceramic Transaction Vol. 3, Advances in Varistor Technology, Edited by L. M. Levinson
  2. 남춘우, '(Pr,Co,Cr,La)-doped ZnO 바리스터 의 전기적 특성에 미치는 소결온도효과' 전기전자재료학회논문지, 19권, 12호, p. 1085, 2006 https://doi.org/10.4313/JKEM.2006.19.12.1085
  3. Y. S. Lee, K. S. Liao, and T. Y. Tseng, 'Microstructure and crystal phase of praseodyrniun oxides-based zinc oxide varistor ceramics', J. Am. Ceram., Vol. 79, No.9, p. 2379, 1996 https://doi.org/10.1111/j.1151-2916.1996.tb08986.x
  4. Y. J. Kim, H. K., K. S. Hong, andJ. K. Lee, 'The reaction of internal electrodes with $Bi_2O_3$ in multilayer ZnO varistor', Journal of the Korean Ceramic Society, Vol. 35, No. 11, p. 1121, 1998
  5. 윤중락, 정태석, 이헌용, 이석원, '소결조건에 따른 ZnO 바라스터의 미세구조 및 전기적특성' 전기전자재료학회논문지 19권, 7호p. 662, 2006 https://doi.org/10.4313/JKEM.2006.19.7.662
  6. Minitab Release ver. 13 User's Guide 1,2,3, 2000
  7. K. T. Jacob, K. T. Lwin, and Y. Waseda, 'System Pr-Pd-O: Phase Diagram and Thermodynamic Properties of Ternary Oxides Using Solid-State Cells with Special Features', Zeitschrift fu r Metallkunde, 92, p. 731, 2001
  8. 유인성, 정종엽, 박춘배, 'ZnO 나노파우더 바리 스터의 제작과 전기적 특성' 전기전자재료학회논문지, 18권, 12호, p. 1117, 2005
  9. AVX TransGuard, Application notes, AVX