Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Comparison of Electrical Characteristics of SiGe pMOSFETs Formed on Bulk-Si and PD-SOI

Bulk-Si와 PD-SOI에 형성된 SiGe p-MOSFET의 전기적 특성의 비교

  • Published : 2007.06.01

Abstract

This paper has demonstrated the electrical properties of SiGe pMOSFETs fabricated on both bulk-Si and PD SOI substrates. Two principal merits, the mobility increase in strained-SiGe channel and the parasitic capacitance reduction of SOI isolation, resulted in improvements in device performance. It was observed that the SiGe PD SOI could alleviate the floating body effect, and consequently DIBL was as low as 10 mV/V. The cut-off frequency of device fabricated on PD SOI substrate was roughly doubled in comparison with SiGe bulk: from 6.7 GHz to 11.3 GHz. These experimental result suggests that the SiGe PD SOI pMOSFET is a promising option to drive CMOS to enhance performance with its increased operation frequency for high speed and low noise applications.

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