Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improving the Thermal Stability of Ni-silicide using Ni-V on Boron Cluster Implanted Source/drain for Nano-scale CMOSFETs

나노급 CMOSFET을 위한 Boron Cluster(B18H22)가 이온 주입된(SOI 및 Bulk)기판에 Ni-V합금을 이용한 Ni-silicide의 열안정성 개선

  • 이세광 (충남대학교 공과대학 전자공학과) ;
  • 이원재 (충남대학교 공과대학 전자공학과) ;
  • 장잉잉 (충남대학교 공과대학 전자공학과) ;
  • 종준 (충남대학교 공과대학 전자공학과) ;
  • 정순연 (충남대학교 공과대학 전자공학과) ;
  • 이가원 (충남대학교 공과대학 전자공학과) ;
  • 왕진석 (충남대학교 공과대학 전자공학과) ;
  • 이희덕 (충남대학교 공과대학 전자공학과)
  • Published : 2007.06.01

Abstract

In this paper, the formation and thermal stability characteristics of Ni silicide using Ni-V alloy on Boron cluster ($B_{18}H_{22}$) implanted bulk and SOI substrate were examined in comparison with pure Ni for nano-scale CMOSFET. The Ni silicide using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate after high temperature post-silicidation annealing showed the lower sheet resistance, no agglomeration interface image and lower surface roughness than that using pure Ni. The thermal stability of Ni silicide was improved by using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate.

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References

  1. C. Y. Lu and J. M. Sung, 'Reverse shortchannel effects on threshold voltage in submicrometer salicide devices', Electron Device Lett., IEEE, Vol. 10, p. 446, 1989 https://doi.org/10.1109/55.43095
  2. H. I. Iwai, T. Ohguro, and S. I. Ohmi, 'NiSi salicide technology for scaled CMOS', Microelectron. Eng., Vol. 60, p. 157, 2000
  3. T. H. Yang, G. Luo, and E. Y. Chang, 'Study of nikel silicide contact on Si/Sil-xGex', IEEE Electron Device Letters, Vol. 4, No.9, p. 544, 2003
  4. W. J. Lee, S. Y. Oh, Y. J. Kim, Y. Y. Zhang, Z. Zhong, S. Y. jung, H. H. Ji, K. J. Hwang, Y. C. Kim, H. T. Cho, W. A. Knull, J. S. Wang, and H. D. Lee, 'Formation and Thermal Stability Characteristics of Ni Silicide on Boron Cluster (B18H22) Implanted Source/ Drain', International Workshop on Junction Technology 2006, p. 184, 2006