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Fully Integrated Electromagnetic Noise Suppressors Incorporated with a Magnetic Thin Film on an Oxidized Si Substrate

  • Sohn, Jae-Cheon (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Han, S.H. (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Yamaguchi, Masahiro (Department of Electrical and Communication Engineering, Tohoku University) ;
  • Lim, S.H. (Department of Materials Science and Engineering, Korea University)
  • Published : 2007.03.31

Abstract

Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.

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