Electrical Properties of (Bi,Y)4Ti3O12 Thin Films Grown by RF Sputtering Method

  • Nam, Sung-Pill (Dept. of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Sung-Gap (Dept. of Ceramic Engineering, Eng. Res. Insti., Gyeongsang National University) ;
  • Bae, Seon-Gi (Dept. of Electrical Engineering, University of Incheon) ;
  • Lee, Young-Hie (Dept. of Electronic Materials Engineering, Kwangwoon University)
  • Published : 2007.03.01


Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.


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