Property Comparison of Ru-Zr Alloy Metal Gate Electrode on ZrO2 and SiO2

ZrO2와 SiO2 절연막에 따른 Ru-Zr 금속 게이트 전극의 특성 비교

  • 서현상 (한국항공대학교 항공전자공학과) ;
  • 이정민 (한국항공대학교 항공전자공학과) ;
  • 손기민 (한국항공대학교 항공전자공학과) ;
  • 홍신남 (한국항공대학교 항공전자공학과) ;
  • 이인규 (한국항공대학교 항공전자공학과) ;
  • 송용승 (한국항공대학교 항공전자공학과)
  • Published : 2006.09.01


In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.


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