Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET

Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화

  • Published : 2006.09.01


In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.


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