Thermal and Chemical Quenching Phenomena in a Microscale Combustor (I) -Fabrication of SiOx(≤2) Plates Using ion Implantation and Their Structural, Compositional Analysis-

마이크로 연소기에서 발생하는 열 소염과 화학 소염 현상 (I) -이온 주입법을 이용한 SiOx(≤2) 플레이트 제작과 구조 화학적 분석-

  • 김규태 (한국과학기술원 대학원 항공우주공학과) ;
  • 이대훈 (한국기계연구원 청정환경기계연구센터) ;
  • 권세진 (한국과학기술원 항공우주공학과)
  • Published : 2006.05.01


Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.



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