Etch Characteristics of NbOx Nanopillar Mask for the Formation of Si Nanodot Arrays

Si Nanodot 배열의 형성을 위한 NbOx 나노기둥 마스크의 식각 특성

  • Park, Ik Hyun (Department of Chemical Engineering, Inha University) ;
  • Lee, Jang Woo (Department of Chemical Engineering, Inha University) ;
  • Chung, Chee Won (Department of Chemical Engineering, Inha University)
  • 박익현 (인하대학교 화학공학과) ;
  • 이장우 (인하대학교 화학공학과) ;
  • 정지원 (인하대학교 화학공학과)
  • Received : 2005.03.04
  • Accepted : 2006.03.27
  • Published : 2006.06.10


We investigated the usefulness of $NbO_{x}$ nanopillars as an etching mask of dry etching for the formation of Si nanodot arrays. The $NbO_{x}$ nanopillar arrays were prepared by the anodic aluminum oxidation process of Al and Nb thin films. The etch rate and etch profile of $NbO_{x}$ nanopillar arrays were examined by varying the experimental conditions such as the concentration of etch gas, coil rf power, and dc bias voltage in the reactive ion etch system using the inductively coupled plasma. As the concentration of $Cl_{2}$ gas increased, the etch rate of $NbO_{x}$nanopillars decreased. With increasing coil rf power and dc bias voltage, the etch rates were found to increase. The etch characteristics and etch mechanism of $NbO_{x}$ nanopillars were investigated by varying the etch time under the selected etch conditions.


Supported by : 인하대학교


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