Chemically Amplified Resist for Extreme UV Lithography

극자외선 리소그래피용 화학증폭형 레지스트

  • Choi, Jaehak (Radiation Application Division, Korea Atomic Energy Research Institute) ;
  • Nho, Young Chang (Radiation Application Division, Korea Atomic Energy Research Institute) ;
  • Hong, Seong Kwon (Department of Polymer Science and Engineering, Chungnam National University)
  • 최재학 (한국원자력연구소 방사선이용연구부) ;
  • 노영창 (한국원자력연구소 방사선이용연구부) ;
  • 홍성권 (충남대학교 공과대학 고분자공학과)
  • Received : 2005.11.01
  • Accepted : 2006.03.17
  • Published : 2006.04.10


Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a matrix resin for extreme UV (EUV) chemically amplified resist. The resist system formulated with this polymer resolved 120 nm line and space (pitch 240 nm) positive patterns using a KrF excimer laser scanner (0.60 NA). The well defined 50 nm line positive patterns (pitch 180 nm) were obtained using an EUV lithography tool. The dry etching resistance of this resist for a $CF_{4}$-based plasma was 1.1 times better than that of poly(4-hydroxystyrene).


Supported by : 충남대학교


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