Effect of Annealing on Structural and Electrical Properties of VOx Thin Films

VOx 박막의 구조적 특성과 전기적 특성에 대한 열처리 영향

  • Lee, Jang Woo (Department of Chemical Engineering, Inha University) ;
  • Chung, Chee Won (Department of Chemical Engineering, Inha University)
  • 이장우 (인하대학교 화학공학과) ;
  • 정지원 (인하대학교 화학공학과)
  • Received : 2006.05.03
  • Accepted : 2006.08.10
  • Published : 2006.10.10

Abstract

$VO_x$ thin films with the thickness of 450 nm were prepared on a $Pt/Ti/SiO_{2}/Si$ substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of $VO_x$ thin films were investigated as a function of $O_{2}$ concentration and rf power. As the $O_{2}$ concentration in a $O_{2}/Ar$ mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited $VO_x$ thin films were annealed at $450^{\circ}C$ for 2, 4, and 6 h in $O_{2}$ and $N_{2}$ ambient. After annealing, the phase changes of $VO_x$ thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of $VO_x$ thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of $VO_x$ thin films were measured using current-voltage measurement. The excellent MIT properties were observed in $VO_x$ thin films annealed in $O_{2}$ ambient.

Keywords

metal-insulator transition property;$VO_x$;sputtering;annealing

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