Effect of Annealing on Structural and Electrical Properties of VOx Thin Films

VOx 박막의 구조적 특성과 전기적 특성에 대한 열처리 영향

  • Lee, Jang Woo (Department of Chemical Engineering, Inha University) ;
  • Chung, Chee Won (Department of Chemical Engineering, Inha University)
  • 이장우 (인하대학교 화학공학과) ;
  • 정지원 (인하대학교 화학공학과)
  • Received : 2006.05.03
  • Accepted : 2006.08.10
  • Published : 2006.10.10


$VO_x$ thin films with the thickness of 450 nm were prepared on a $Pt/Ti/SiO_{2}/Si$ substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of $VO_x$ thin films were investigated as a function of $O_{2}$ concentration and rf power. As the $O_{2}$ concentration in a $O_{2}/Ar$ mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited $VO_x$ thin films were annealed at $450^{\circ}C$ for 2, 4, and 6 h in $O_{2}$ and $N_{2}$ ambient. After annealing, the phase changes of $VO_x$ thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of $VO_x$ thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of $VO_x$ thin films were measured using current-voltage measurement. The excellent MIT properties were observed in $VO_x$ thin films annealed in $O_{2}$ ambient.


metal-insulator transition property;$VO_x$;sputtering;annealing


  1. J. M. Hong, J. Solid State Chem., 45, 1 (1982) https://doi.org/10.1016/0022-4596(82)90287-0
  2. Y. Takahashi, M. Kanamori, H. Hashimoto, Y. Moritani, and Y. Manuda, J. Mater. Sci., 24, 192 (1989) https://doi.org/10.1007/BF00660953
  3. F. A. Chudnovskii, L. L. Odynets, A. L. Pergament, and G. B. Stefanovich, J. Solid State Chem., 122, 95 (1996) https://doi.org/10.1006/jssc.1996.0087
  4. A. D. Rata, A. R. Chezan, C. Presura, and T. Hibma, Surf. Sci., 341, 532 (2003)
  5. G. A. Rozgonyi and D. H. Hensler, J. Vac. Sci. Technol., A5, 194 (1968)
  6. A. A. Bugaev, B. P. Zakharchenya, and F. A. Chudnovskii, in Metal-Semiconductor Phase Transition and Its Application, Leningred, Nauka (1979)
  7. H. Ermine, F. Picard, and D. Vincent, Opt. Eng., 32, 2092 (1993) https://doi.org/10.1117/12.143951
  8. Z. S. El Mandouh and A. N. Selim, Thin Solid Films, 371, 259 (2000) https://doi.org/10.1016/S0040-6090(00)01003-8
  9. M. Borek, F. Qian, V. Hagabushnam, and R. K. Singh, Appl. Phys. Lett., 63, 3288 (1993) https://doi.org/10.1063/1.110177
  10. S. B. Wang, S. B. Zhou, G. Huang, and X. J. Yi, Surf. Coat. Tech., 191, 330 (2005) https://doi.org/10.1016/j.surfcoat.2004.03.026