Effect of O2 Concentration and Annealing Temperature on the Characteristics of Indium Zinc Oxide Thin Films

Indium Zinc Oxide 박막 특성에 대한 O2 농도와 열처리 온도의 영향

  • Cho, Han Na (Department of Chemical Engineering, Inha University) ;
  • Li, Yue Long (Department of Chemical Engineering, Inha University) ;
  • Min, Su Ryun (Department of Chemical Engineering, Inha University) ;
  • Chung, Chee Won (Department of Chemical Engineering, Inha University)
  • 조한나 (인하대학교 화학공학과) ;
  • 리유에롱 (인하대학교 화학공학과) ;
  • 민수련 (인하대학교 화학공학과) ;
  • 정지원 (인하대학교 화학공학과)
  • Received : 2006.08.30
  • Accepted : 2006.10.25
  • Published : 2006.12.10

Abstract

The indium zinc oxide (IZO) thin films were deposited using a radio frequency reactive magnetron sputtering method. Among the various processing variables, $O_{2}$ concentration and annealing temperature after deposition were selected and the optical, electrical, and structural properties of IZO thin films were investigated. As the $O_{2}$ concentration increased, the deposition rate of IZO thin films decreased, the resistivity increased and the transmittance slightly increased. According to atomic force microscopy analysis, the IZO films deposited at pure Ar showed rough surface and those deposited with $O_{2}$ addition exhibited relatively smooth surface. The IZO thin films deposited at pure Ar were annealed at 250, 350, and $450^{\circ}C$, respectively. The IZO thin film deposited at pure Ar showed the lowest transmittance and resistivity and resistivity greatly increased at the annealing temperature exceeding $250^{\circ}C$. The higher annealing temperature IZO films were annealed at, the smoother surface the films showed. The x-ray diffraction revealed that IZO films annealed at higher temperature had better crystalline structures.

Keywords

transparent conducting electrode;indium zinc oxide;deposition

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