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Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing

  • Cho, Kyu-Chul (Department of Material Science & Engineering, Hanyang University) ;
  • Jeon, Hyeong-Tag (Department of Material Science & Engineering, Hanyang University) ;
  • Park, Jea-Gun (Nano-SOI Process Laboratory, Hanyang University)
  • Published : 2006.05.27

Abstract

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

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