Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation

양성자 조사법에 의한 PT-IGBT의 Turn-off 스위칭 특성 개선

  • 최성환 (경북대학교 전자전기컴퓨터공학부) ;
  • 이용현 (경북대학교 전자전기컴퓨터공학부) ;
  • 권영규 (위덕대학교 전자공학부) ;
  • 배영호 (위덕대학교 전자공학부)
  • Published : 2006.12.01


Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.


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