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Electrical Properties of ZnO Varistors with Variation of Glass Addition

Glass 첨가량에 따른 ZnO 바리스터의 전기적 특성

  • 조현무 (서남대학교 전기전자공학부) ;
  • 이종덕 (서남대학교 전기전자공학부) ;
  • 박상만 (서남대학교 전기전자공학부) ;
  • 이성갑 (국립 경상대학교 세라믹공학과)
  • Published : 2005.09.01

Abstract

ZnO varistor ceramics were fabricated with variation of addition of glass-frit amount and the sintering temperature was $1100^{\circ}C$. The average grain sizes were showed increased from $8.6{\mu}m\;to\;10{\mu}m$, and varistor voltages were decreased from 506V to 460V by added amount of glass-frit. Nonlinear coefficient $\alpha$, of all were with increasing the amount of glass-frit more than 70, in case of added on $0.03wt\%$ glass-frit was 83. And leakage current were less than $1{\mu}A$ with applied at $82\%$ of varistor voltage. The clamping voltage ratio of the specimens added $0.03wt\%$ glass-frit was 1.41 at applied 25A $[8/20\;{\mu}s]$. In the specimen added $0.03wt\%$ glass-frit, endurance of surge current and deviation of varistor voltage were $6200A/cm^2,\;\Delta-1.67\%$, respectively and clamping voltage ratio was 2.33. In the Specimen added $0.03wt\%$ glass-frit were superior to any other compositions on High Temperature Load Test(HTLT) for 1000 hr at $85^{\circ}C$, and deviation of the varistor voltage were $\Delta-1.29\%$.

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