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Characterization of Pb(Zr0.2Ti0.8)O3 Thin Films Deposited at Various Temperatures on SrRuO3/SrTiO3 Substrates by Pulsed Laser Deposition

Pulsed Laser Deposition에 의해 SrRuO3/SrTiO3 기판위에 여러 가지 증착온도에서 증착된 Pb(Zr0.2Ti0.8)O3 박막의 특성

  • 이우성 (충남대학교 신소재공학부) ;
  • 정관호 (충남대학교 신소재공학부) ;
  • 김도훈 (충남대학교 신소재공학부) ;
  • 김시원 (충남대학교 신소재공학부) ;
  • 김형준 (충남대학교 신소재공학부) ;
  • 박종령 (충남대학교 신소재공학부) ;
  • 송영필 (충남대학교 신소재공학부) ;
  • 윤희근 (충남대학교 신소재공학부) ;
  • 이세민 (충남대학교 신소재공학부) ;
  • 최인혁 (충남대학교 신소재공학부) ;
  • 윤순길 (충남대학교 신소재공학부)
  • Published : 2005.09.01

Abstract

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

References

  1. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, 'Preparation of Pb(Zr,Ti)$O_3$ thin films on electrodes including $IrO_2$', Appl. Phys. Lett., Vol. 65, No. 12, p. 1522, 1994
  2. H. N. Al-Shareef, K. R. Bellur, A. I. Kingon, and O. Auciello, 'Influence of platinum inter-layers on the electrical properties of $RuO_2/PZT/RuO_2$ capacitor heterostructures', Appl. Phys. Lett., Vol. 66, No. 2, p. 239, 1995
  3. C. B. Eom, R. B. Van Dover, J. M. Phillips, D. J. Werder, J. H. Marshall, C. H. Chen, R. J. Cava, and R. M. Fleming, 'Fabrication and properties of epitaxial ferroelectric heterostructures with ($SrRuO_3$) isotropic metallic oxide electrodes', Appl. Phys. Lett., Vol. 63, No. 18, p. 2570, 1993 https://doi.org/10.1063/1.110625
  4. H. Nonomura, H. Fujisawa, M. Shimizu, and H, Niu, 'Epitaxial growth and ferroelectric properties of the 20-nm-thick Pb(Zr,Ti)$O_3 film on $SrTiO_3$(100) with an atomically flat surface by metalorganic chemical vapor deposition', Jpn. J. Appl. Phys., Vol. 41, No. 11B, p. 6682, 2002
  5. Y. S. Kim, D. H. Kim, J. D. Kim, T. W. Noh, J. H. Kong, Y. D. Park, S. D. Bu, and J. G. Yoon, 'Fabrication and thickness dependent properties of ferroelectric hetero-structure', J. of Kor. Phys. Soc., Vol. 46, No. 1, p. 55, 2005