Characterization of Pb(Zr0.2Ti0.8)O3 Thin Films Deposited at Various Temperatures on SrRuO3/SrTiO3 Substrates by Pulsed Laser Deposition

Pulsed Laser Deposition에 의해 SrRuO3/SrTiO3 기판위에 여러 가지 증착온도에서 증착된 Pb(Zr0.2Ti0.8)O3 박막의 특성

  • 이우성 (충남대학교 신소재공학부) ;
  • 정관호 (충남대학교 신소재공학부) ;
  • 김도훈 (충남대학교 신소재공학부) ;
  • 김시원 (충남대학교 신소재공학부) ;
  • 김형준 (충남대학교 신소재공학부) ;
  • 박종령 (충남대학교 신소재공학부) ;
  • 송영필 (충남대학교 신소재공학부) ;
  • 윤희근 (충남대학교 신소재공학부) ;
  • 이세민 (충남대학교 신소재공학부) ;
  • 최인혁 (충남대학교 신소재공학부) ;
  • 윤순길 (충남대학교 신소재공학부)
  • Published : 2005.09.01


[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.


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