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Electro-chemical Mechanical Deposition for Planarization of Cu Interconnect

Cu 배선의 평탄화를 위한 ECMD에 관한 연구

  • 정석훈 (부산대학교 정밀기계공학과) ;
  • 서헌덕 (부산대학교 정밀기계공학과) ;
  • 박범영 (부산대학교 정밀기계공학과) ;
  • 박재홍 (부산대학교 정밀기계공학과) ;
  • 박성민 (부산대학교 정밀기계공학과) ;
  • 정문기 (부산대학교 미세기계전자시스템 협동과정) ;
  • 정해도 (부산대학교 정밀정형 및 금형가공 연구소) ;
  • 김형재
  • Published : 2005.09.01

Abstract

This study introduces Electro-chemical Mechanical Deposition(ECMD) lot making Cu interconnect. ECMD is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves electrochemical deposition(ECD) and mechanical sweeping of the substrate surface Preferential deposition into the cavities on the substrate surface nay be achieved through two difference mechanisms. The first mechanism is more chemical and essential. It involves enhancing deposition into the cavities where mechanical sweeping does not reach. The second mechanism involves reducing deposition onto surface that is swept. In this study, we demonstrate ECMD process and characteristic. We proceeded this experiment by changing of distribution of current density on divided water area zones and use different pad types.

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