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Binding Energy in the n-type Al2Gax-1A3-GaAs Quantum well according to the Trial function

Al2Gax-1A3-GaAs 양자우물에서 시도함수에 따른 결합에너지

  • 이건영 (인하대학교 전자전기공학부) ;
  • 이무상 (인하대학교 전자전기공학부) ;
  • 전상국 (인하대학교 전자전기공학부)
  • Published : 2005.09.01

Abstract

The binding energy in the n-type $GaAs/Al_xGa_{1-x}As$ quantum well is calculated. The shooting method, modified from the finite difference method, is used for the calculation of the subband energy level and its wave function. In order to account tot the change of the potential energy due to the charged particles, impurities and electrons, the self consistent method is employed. The wave function used for the calculation of the binding energy is assumed to be composed of the envelope function and hydrogenic 1s function. Then, the binding energies calculated by taking into account lot two different types of the hydrogenic 1s function are compared.

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