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Electrochemical Polarization Characteristics and Effect of the CMP Performances of Tungsten and Titanium Film by H2O2 Oxidizer

H2O2 산화제가 W/Ti 박막의 전기화학적 분극특성 및 CMP 성능에 미치는 영향

  • 나은영 (조선대학교 에너지자원 신기술연구소) ;
  • 서용진 (대불대학교 전기전자공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2005.06.01

Abstract

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. Also CMP process got into key process for global planarization in the chip manufacturing process. In this study, potentiodynamic polarization was carried out to investigate the influences of $H_2O_2$ concentration and metal oxide formation through the passivation on tungsten and titanium. Fortunately, the electrochemical behaviors of tungsten and titanium are similar, an one may expect. As an experimental result, electrochemical corrosion of the $5\;vol\%\;H_2O_2$ concentration of tungsten and titanium films was higher than the other concentrations. According to the analysis, the oxidation state and microstructure of surface layer were strongly influenced by different oxidizer concentration. Moreover, the oxidation kinetics and resulting chemical state of oxide layer played critical roles in determining the overall CMP performance. Therefore, we conclude that the CMP characteristics tungsten and titanium metal layer including surface roughness were strongly dependent on the amounts of hydrogen peroxide oxidizer.

References

  1. J. Huang, H. C, Chen, J. Y. Wu, and W. Lur, 'Investiation of CMP micro-scratch in the fabrication of sub-quarter micron VLSI circuit', Proceeding of CMP-MIC, p. 77, 1999
  2. M. Lin, C. Y. Chang, D. C. Liao, B. Wang, and Allen Henderson, 'Improved STI CMP technology for micro-scratch issue', proceedings of CMP-MIC, p. 322, 1999
  3. 김상용, 서용진, 김태형, 이우선, 김창일, 장의구, 'Chemical mechanical polishing 공정을 이 용한 multilevel metal 구조의 팡역평탄화에 관한 연구', 전기전자재료학회논문지,11권, 12호, p. 1084, 1998
  4. D. Tamboli, S. Seal, V. Desai, and A. Maury, 'Studies on passivation behavior of tungsten in application to chemical mechanical polishing', J. Vac. Sci., Technol., Vol. 17, No.4, p. 1168, 1999
  5. J. M. Steigerwald, S, P. Murarka, and R. J. Gutmann, 'Chemical Mechanical Planarization of Microelectronic Materials', p. 274, John Wiley & Sons, Inc., New York, 1997
  6. Y. J. Seo and W. S. Lee, 'Effects of oxidant additives for exact selectivity control of W- and Ti-CMP process', Microelectron. Eng., Vol. 77, No.2, p. 132, 2005
  7. S. Y. Kim, Y. J. Seo, W. S. Lee, and E. G. Chang, 'Study of micro-defect on oxide CMP in VLSI circuits', Electrochem, Soc., Proc., Vol. 99, p. 275, 1999
  8. 나은영, 서용진, 이우선,'혼합 산화제를 사용한 텅스텐 막의 전기화학적 부식 및 CMP 특성', 전기전자재료학회논문지, 18권,4호, ,p 303, 2005
  9. J. Henandez, P. Wrschka, and G. S. Oehrlein, 'Surface chemistry studies of copper chemical mechanical planarization', J. Electrochem. Soc., Vol. 148, No.7, p. G359, 2001