Electrochemical Polarization Characteristics and Effect of the CMP Performances of Tungsten and Titanium Film by H2O2 Oxidizer

H2O2 산화제가 W/Ti 박막의 전기화학적 분극특성 및 CMP 성능에 미치는 영향

  • 나은영 (조선대학교 에너지자원 신기술연구소) ;
  • 서용진 (대불대학교 전기전자공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2005.06.01


CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. Also CMP process got into key process for global planarization in the chip manufacturing process. In this study, potentiodynamic polarization was carried out to investigate the influences of $H_2O_2$ concentration and metal oxide formation through the passivation on tungsten and titanium. Fortunately, the electrochemical behaviors of tungsten and titanium are similar, an one may expect. As an experimental result, electrochemical corrosion of the $5\;vol\%\;H_2O_2$ concentration of tungsten and titanium films was higher than the other concentrations. According to the analysis, the oxidation state and microstructure of surface layer were strongly influenced by different oxidizer concentration. Moreover, the oxidation kinetics and resulting chemical state of oxide layer played critical roles in determining the overall CMP performance. Therefore, we conclude that the CMP characteristics tungsten and titanium metal layer including surface roughness were strongly dependent on the amounts of hydrogen peroxide oxidizer.


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