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Wafer Burn-in Method for SRAM in Multi Chip Package

Multi Chip Package의 SRAM을 위한 웨이퍼 Burn-in 방법

  • 윤지영 (고려대학교 전기공학과) ;
  • 유장우 (고려대학교 전기공학과) ;
  • 김후성 (삼성전자(주) 메모리사업부) ;
  • 성만영 (삼성전자(주) 메모리사업부)
  • Published : 2005.06.01

Abstract

This paper presents the improved burn-in method for the reliability of SRAM in Multi Chip Package (MCP). Semiconductor reliability is commonly improved by the burn-in process. Reliability Problem is very significant in the MCP which includes over two chips in a package because the failure of one SRAM chip has a large influence on the yield and quality of the other chips such as Flash Memory, DRAM, etc. Therefore the quality of SRAM must be guaranteed. To improve the qualify of SRAM, we applied the improved wafer level burn-in process using multi cell selection method in addition to the previously used methods and it is found to be effective in detecting particular failures. Finally, with the composition of some kinds of methods, we achieved the high quality of SRAM in MCP.

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