Ferroelectric Properties of SBT Capacitors with Annealing Conditions

SBT 커패시터의 열처리 조건에 따른 강유전 특성

  • Lee, Sung-Ill (Department of Safety Engineering, Chungju National University)
  • 이성일 (충주대학교 안전공학과)
  • Published : 2004.03.01

Abstract

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on pt-coated electrode(Pt/$TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with annealing conditions were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$,/TEX> and grains largely grew in oxygen annealing atmosphere. The maximum renanent polarization and the coercive electric field with annealing conditions are 12.40C/$cm^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 2.13${\times}10^{-10}A/cm^2$, respectively.

Keywords

RF magnetron sputtering method;annealing temperatures;leakage current density;remanent polarization

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