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Characteristics of Friction Affecting CMP Results

CMP 결과에 영향을 미치는 마찰 특성에 관한 연구

  • 박범영 (부산대학교 정밀기계공학과) ;
  • 이현섭 (부산대학교 정밀기계공학과) ;
  • 김형재 (부산대학교 정밀기계공학과) ;
  • 서헌덕 (부산대학교 정밀기계공학과) ;
  • 김구연 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2004.10.01

Abstract

Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.

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  2. Effect of pad’s surface deformation and oscillation on monocrystalline silicon wafer surface quality vol.15, pp.11, 2014, https://doi.org/10.1007/s12541-014-0594-4