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A Study on the Orientation and the Roughness with the Deposition Condition of AIN Thin Films Prepared by RF Magnetron Sputtering Method

RF 마그네트론 스퍼터링법에 의해 합성된 AIN 박막의 공정조건에 따른 우선 배향성 및 평탄성에 관한 연구

  • 이민건 (인하대학교 전자공학과) ;
  • 장동훈 (인하대학교 전자공학과) ;
  • 강성준 (여수대학교 반도체학과) ;
  • 윤영섭 (인하대학교 전자공학과)
  • Published : 2004.10.01

Abstract

We fabricated AIN thin film by using RF magnetron sputtering and studied the structural characteristic of AIN thin film with the change of the deposition conditions such as Ar/$N_2$ flow ratio, working pressure, and the distance between substrate and target. The orientation and surface roughness of AIN thin film were studied by using XRD and AFM. We can not identify the orientation of the thin film deposited in Ar, while we obtained the (l00) orientation of the thin film with the addition of $N_2$. Especially, the thin film deposited at 18/2 (seem) of Ar/$N_2$ flow ratio exhibited to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the working pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film, but the (100) orientation becomes weaker and (002) orientation started to appear as the distance is shorter. The surface roughness of the thin film deposited at 50$0^{\circ}C$ in Ar only is 1.1 nm, while very smooth thin film of 0.4~0.6 nm is obtained with the addition of $N_2$.

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