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Crystallographic Properties of ZnO/AZO thin Film Prepared by FTS method

FTS법으로 제작한 ZnO/AZO 박막의 결정학적 특성

  • 금민종 (경원대학교 전기정보공학과) ;
  • 강태영 (경원대학교 전기정보공학과) ;
  • 최형욱 (경원대학교 전기정보공학과) ;
  • 박용서 (경원대학교 전기정보공학과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Published : 2004.09.01

Abstract

The ZnO thin films were prepared by the FTS (facing target sputtering) system, which enables to provide high density plasma and a high deposition rate at a low working gas pressure. We introduced the AZO thin film in order to improve the crystallographic properties of ZnO thin film because of the AZO(ZnO:Al) thin film has an equal crystal structure to the ZnO thin film. ZnO/AZO thin films were deposited at a different oxygen gas flow ratio, R.T. 2mTorr working pressure and a 0.8A sputtering current. The film thickness and c-axis preferred orientation of ZnO/AZO/glass thin films were measured by ${\alpha}$-step and an x-ray diffraction (XRD) instrument. In the results, we could prepare the ZnO thin film with c-axis preferred orientation of about 6$^{\circ}$ on substrate temperature R.T. at O$_2$ gas flo rate 0.5.

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