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Synthesis and Characterization of Novel Acid Amplifiers with a Low Absorbance at 193 nm

193 nm에서 낮은 흡수도를 갖는 새로운 산 증식제의 합성 및 특성연구

  • 소진호 (부경대학교 화상정보공학부) ;
  • 정용석 (부경대학교 화상정보공학) ;
  • 최상준 ((주)삼성 반도체 연구) ;
  • 정연태 (부경대학교 화상정보공학부)
  • Published : 2004.08.01

Abstract

1-Hydroxy-4-(2-naphthalenesulfonyloxy) cyclohexane(1), 1,4-di-(2-naphthalenesulfonyloxy) cyclohexane(2), 1-hydroxy-4-(2-thiophenesulfonyloxy) cyclohexane(3), 1,4-di-(2-thiophenesulfonyloxy) cyclohexane(4) were synthesized and evaluated for their performance as novel acid amplifiers for 193 nm photoresists. These acid amplifiers(1-4) showed reasonable thermal stability at the usual resist-processing temperature, 9$0^{\circ}C$-12$0^{\circ}C$. And estimated by the sensitivity curve, (1)-(4) enhanced the sensitivity of poly(tert-butyl methacrylate) film by 1.2-1.4 times, compared to poly(tert-butyl methacrylate) film whithout acid amplifiers, in the presence of a photoacid generator.

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