Synthesis and Characterization of Novel Acid Amplifiers with a Low Absorbance at 193 nm

193 nm에서 낮은 흡수도를 갖는 새로운 산 증식제의 합성 및 특성연구

  • 소진호 (부경대학교 화상정보공학부) ;
  • 정용석 (부경대학교 화상정보공학) ;
  • 최상준 ((주)삼성 반도체 연구) ;
  • 정연태 (부경대학교 화상정보공학부)
  • Published : 2004.08.01


1-Hydroxy-4-(2-naphthalenesulfonyloxy) cyclohexane(1), 1,4-di-(2-naphthalenesulfonyloxy) cyclohexane(2), 1-hydroxy-4-(2-thiophenesulfonyloxy) cyclohexane(3), 1,4-di-(2-thiophenesulfonyloxy) cyclohexane(4) were synthesized and evaluated for their performance as novel acid amplifiers for 193 nm photoresists. These acid amplifiers(1-4) showed reasonable thermal stability at the usual resist-processing temperature, 9$0^{\circ}C$-12$0^{\circ}C$. And estimated by the sensitivity curve, (1)-(4) enhanced the sensitivity of poly(tert-butyl methacrylate) film by 1.2-1.4 times, compared to poly(tert-butyl methacrylate) film whithout acid amplifiers, in the presence of a photoacid generator.


  1. Macromol. Chem. Phys. v.201 4-(tert-Butoxy-carbonyloxy)benzylp-toluenesulfonatesas acid-fiers applicable to chemically amplified photoresists H. Ito;K. Arimitsu;K. Ichimura<132::AID-MACP132>3.0.CO;2-3
  2. Proc. SPIE. v.3999 Acid amplifiers-proton transfer or direct acid formation W. S. Huang;R. E. Kwong;W. Moreau
  3. 전기전자재료학회지 v.1 no.4 A study on the characteri-stics of negative photoresist using inorganic a-Se75 Ge25 thin film 정홍배;허훈;김태원
  4. J. Val. Sci. Techhnol. B. v.13 no.6 Reaction modeling of chemically amplified resist for ArF excimer laser lithography T. Ohfuji;K. Nakano;E. Hsegawa
  5. Proc. SPIE v.3049 Acid amplification of chamically amplified resists for 193nm litho-graphy T. Ohfugi;M. Takahashi;Kuhara;K. Ogawa;H. Ohtsuka;M. Sasago;K. Ichimura
  6. J of KIEEME v.15 no.3 The development of silylated photoresist etch process by enhanced-inductively coupled plasma S. B. Jo;C.W. Kim;J. S. Jeong;B. W. O.;S. G. Park;J. G. Lee
  7. J. Kor. Soc. Imaging Sci. Technol. v.7 Synthesis and characterization of a novel acid amplifier YT.Jeong;E.J.Lee;J.Y.Park
  8. J. Kor. Printing Soc. v.20 no.1 1-Hydroxy-4-tosyloxy cyclohexane and 1,4-ditosyloxy cyclohexane as acid amplifiers to enhance the photo-sensitivity of positive-working photoresists Y. T. Jeong;E. J. Lee;K. A. Kuen
  9. J. of KIEEME v.7 no.5 A Study on the E-bean resist characteristics of plasma polymered styrene D. C. Lee;J. K. Park
  10. Photopolym. Sci. Technol. v.12 Synthesis and characteristics of a novel acid amplifier with a low absorbance at 193 nm S.W. Park;K. Arimitsu;K. Ichimura;T. Ohfugi