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Characteristics of Latch-up Current of the Dual Gate Emitter Switched Thyristor

Dual Gate Emitter Switched Thyristor의 Latch-up 전류 특성

  • 이응래 (충북대학교 전기전자공학부) ;
  • 오정근 (충북대학교 전기전자공학) ;
  • 이형규 (충북대학교 전기전자공학) ;
  • 주병권 (한국과학기술연구원 마이크로시스) ;
  • 김남수 (충북대학교 전기전자공학부)
  • Published : 2004.08.01

Abstract

Two dimensional MEDICI simulator is used to study the characteristics of latch-up current of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics, latch-up current density, ON-voltage drop and electrical property with the variations of p-base impurity concentrations. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have the better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer p-base structure under the floating $N^+$ emitter indicates to have the better characteristics of latch-up current and breakover voltage.

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