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Properties of Ru1Zr1 Alloy Gate Electrode for NMOS Devices

NMOS 소자에 대한 Ru1Zr1 합금 게이트 전극의 특성

  • 이충근 (한국항공대학교 전자ㆍ정보통신ㆍ컴퓨터공학부) ;
  • 강영섭 (한국항공대학교 전자ㆍ정보통신ㆍ컴퓨터공학) ;
  • 홍신남 (한국항공대학교 전자ㆍ정보통신ㆍ컴퓨터공학부)
  • Published : 2004.06.01

Abstract

This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

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