C-V Response Properties of Alcohol Vapor Sensors Based on Porous Silicon

다공질 실리콘 알코올 가스 센서의 C-V 응답 특성

  • 김성진 (경남대학교 전자전기공학부) ;
  • 이상훈 (경남대학교 전자전기공학) ;
  • 최복길 (공주대학교 정보통신공학) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2004.06.01


Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.


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