DOI QR코드

DOI QR Code

C-V Response Properties of Alcohol Vapor Sensors Based on Porous Silicon

다공질 실리콘 알코올 가스 센서의 C-V 응답 특성

  • 김성진 (경남대학교 전자전기공학부) ;
  • 이상훈 (경남대학교 전자전기공학) ;
  • 최복길 (공주대학교 정보통신공학) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2004.06.01

Abstract

Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.

References

  1. L. T. Canham, 'Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers', Appl. Phys. Lett., Vol. 57, p. 1046, 1990 https://doi.org/10.1063/1.103561
  2. P. Steiner and W. Lang, 'Micromachining applications of porous silicon', Thin Solid Films, Vol. 255, p. 52, 1995 https://doi.org/10.1016/0040-6090(95)91137-B
  3. R.C. Anderson, R. S. Muller, and C. W. Tobias, 'Investigations of porous silicon for vapour sensing', Sensors and Actuators, Vol. A21-22, p. 835, 1990
  4. S. J. Kim, B. H. Jeon, K. S. Choi, and N. K. Min, 'Capacitive porous silicon sensors for measurement of low alcohol gas concentration at room temperature', J. of Solid State Electrochemistry, Vol. 4, p. 363, 2000 https://doi.org/10.1007/s100089900090
  5. K. Watanabe, T. Okada, I. Choe, and Y. Sato, 'Organic vapor sensitivity in a porous silicon device', Sensors & Actuators, Vol. B-33, p. 194, 1996
  6. I. Schechter, B. C. Moshe, and A. Kux, 'Gas sensing properties of porous silicon'. Anal. Chem., Vol. 67, p. 3727, 1995 https://doi.org/10.1021/ac00116a018
  7. 김성진, 이상훈, 최복길, '다공질 실리콘의 유기가스 검지 특성', 전기전자재료학회논문지, 제 15권, 11호, p. 963, 2002
  8. 박광열, 강경석, 김성진, 이상훈, 최복길, 성만영, '"Electrical properties of alcohol vapor sensors based on porous silicon', 전기전자재료학회논문지, 16권, 12S호, p. 1232, 2003
  9. 정연실, 배규식, '반도체 / SADS ( silicide as diffusion source ) 법으로 형성한 코발트 폴리사이트 게이트의 C-V 특성', 전기전자재료학회 논문지, 제14권, 7호, p. 557, 2000
  10. W. C. Jung, 'l-V and C-V measurements of Fabricated P+/N junction diode in antimony doped ( 111 ) silicon', Trans. on EEM, Vol. 3, No.2, p. 10, 2002
  11. E. H. Nicollian and J. R. Brews, 'MOS Physics and Technology', John Wiley, p. 492, 1982