Studies for Improvement in SiO2 Film Property for Thin Film Transistor

박막트랜지스터 응용을 위한 SiO2 박막 특성 연구

  • 서창기 (성균관대학교 정보통신공학부) ;
  • 심명석 (성균관대학교 정보통신공학) ;
  • 이준신 (성균관대학교 정보통신공학부)
  • Published : 2004.06.01


Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.


  1. Hiroaki kitahara, Mitsutaka Morimoto, Hidehiko Katoh, and Masaya Hijikigawa, 'Long term roadmap for products and technology of TFT-LCD toward 2010', Proc. 2002 IDW conf., SID, p. 291, 2002
  2. Kenji Nakazawa, 'Recrystallization of amorphous silicon films deposited by low-pressure chemical vapor deposition from $Si_2H_6$ gas', J. Appl. Phys., Vol. 69, No.3, p. 1703, 1991
  3. 이준신, 이호, 도이미, 정창오, 유진태, 강해성, 박영복, 임동우, 김관식, '2002 신기술동향조사 보고서 - 박막트랜지스터', p. 166. 2002
  4. 이인찬, 마대영 'Oxide- Nitride- Oxide 막을 게이트 절연막으로 사용하여 제조한 다결정실리콘 박막트랜지스터의 특성', 전기전자재료학회논문지, 16권, 12호, p. 1065, 2003
  5. 김상기, 박일용, 구진근, 김종대 '다양한 기울기를 갖는 TEOS 필드 산화막의 경사식각', 전기전자재료학회논문지, 15권, 10호, p. 844, 2002
  6. B. L. Sopori, X. Deng, j. p. Benner, A. Rohatgi, p. Sana, S. K. Estreicher, Y. K. Park, and M. A. Roberson 'Hydrogen in silicon: A discussion of diffusion and passivation mechanisms', Solar Energy Materials and Solar Cells., Vol 41/42 p. 159, 1996
  7. F. V. Farmakis, D. M. Tsamados, J. Brini, G. Kamarinos, C. A. Dimitriadis, and M. Miyasaka 'Hydrogenation in laser annealed polysilicon thin -film transistors', Thin Solid Films., Vol. 383, p, 151, 2001
  8. 이시우, 김효육, 이정현 'TFT-LCD 용 게이트 절연막 제조 연구', 기술개발 보고서, p. 19, 1998
  9. S. Wolf, R. N. Tauber 'Silicon Processing for the VLSI Era' lattice press. p. 75, 2000
  10. K. Ramkumar, A. N. Saxena, J. Electrochem. Soc., Vol. 149(9), p. 2669, 1993
  11. 권순현, 선우웅, 김의정, 'Watkins Johns on System에서 TEOS/오존에 의한 $SiO_2$화학증착', Theories and Application of chem. Eng., Vol. 2, No 2, p. 2607, 1996
  12. S. K. Ray, C, K. Maiti, S. K. Lahiri, and N. B. Chakrabarti. 'Properties of silicon dioxide films deposition at low temperatures by microwave plasma enchanced decomposition of tetraethylorthosilicate', J. vac. Sci. Technol, B., Vol. 10, No, 3, p. 1139, 1992
  13. K. Shroder 'Semiconductor Material and Device Characterization', Wiley, p. 244, 1990
  14. E. H. Poindexter, P. J. Caplan, and G. J. Geradi 'The Physics and Chemistry of SiO2 and the $Si-SiO_2$ Interface', Plenum Press, New York, p. 299, 1988