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Analysis of the Critical Characteristics in the Superconducting Strip Lines by ICP Etching System

ICP 식각 시스템에 의한 초전도 스트립 라인의 임계 특성 분석

  • 고석철 (전북대학교 전자정보공학부) ;
  • 강형곤 (전북대학교 기초과학연구) ;
  • 최효상 (조선대학교 전기공학) ;
  • 양성채 (전북대학교 전자정보공학) ;
  • 한병성 (전북대학교 전자정보공학부)
  • Published : 2004.07.01

Abstract

Superconducting flux flow transistor (SFFT) is based on a control of the Abrikosov vortex flowing along a channel. The induced voltage by moving of the Abrikosov vortex in an SFFT is greatly affected by the thickness, the width, and the length of channel. In order to fabricate a reproducible channel in the SFFT, we studied the variation of the critical characteristics of ${YBa}_2{Cu}_3{O}_7-\delta(YBCO)$ thin films with the etching time using ICP (Inductively coupled plasma) system. From the simulation, it was certified that the vortex velocity was increased in a low pinning energy at channel width 0,5 mm. The surfaces of YBCO thin film were etched by ICP etching system. We observed the etched channel surfaces by AFM (Atomic Force Microscope) and measured the critical current density with etching time. As a measured results, the etching thickness of channel should be optimized to fabricated a flux flow transistor with specified characteristics.

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