Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Reduction of Operating Voltage of GaN-based Blue-violet Laser Diode by using Highly Mg Doped GaN Layer

고농도의 Mg가 도핑된 GaN층을 이용한 GaN계 청자색 레이저다이오드의 동작 전압 감소

  • 곽준섭 (삼성종합기술원 포토닉스랩)
  • Published : 2004.07.01

Abstract

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

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References

  1. The Blue Laser Diode S.Nakamura;G.Fasol
  2. 전기전자재료학논문지 v.15 no.6 차세대 HD-DVD 광원용 GaN based laser diode의 개발동향 남옥현
  3. Jpn. J. Appl. Phys. Part 1 v.40 GaN-based high power blue-violer laser diodes T.Tojyo;T.Asano;M.Takeya;T.Hino;S.Goto;S.Uchida;M.Ikeda https://doi.org/10.1143/JJAP.40.3206
  4. Nitride Semiconductors and Devices H.Morkoc
  5. J. Electron Mater. v.30 Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN J.K.Kim;J.H.Kim;B.Kim;J.N.Kim;J.S.Jwak;Y.Park;J.L.Lee https://doi.org/10.1007/s11664-001-0005-3
  6. J. Appl. Phys. v.88 Mechanisms for the reduction of the Schottly barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN J.S.Jang;T.Y.Seong https://doi.org/10.1063/1.1287236
  7. Physics of Semiconductors and their heterostructures J.Singh
  8. Phys. Rev. v.42 Anomalous Hall-effect results in low-temperature molecular-beam-exitaxial GaAs;Hopping in a dense EL2-like band D.C.Look;D.C.Walters;M.O.Manasreh;J.R.Sizelove;C.E.Stutz;K.R.Evans https://doi.org/10.1103/PhysRevB.42.3578
  9. Appl. Phys. Lett. v.77 Current transport mechanism of p-GaN Schottky contacts K.Shiojima;T.Sugahara;S.Sakai https://doi.org/10.1063/1.1332981
  10. Appl. Phys. Lett. v.79 Study on Schottky barrier of Ni on p-GaN S.Yu;D.Qiao;L.Jia;S.S.Lau;Y.Qi;K.M.Lau https://doi.org/10.1063/1.1428773
  11. Appl. Phys. Lett. v.57 Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band H.Yamamoto;Z.Q.Fang;D.C.Look https://doi.org/10.1063/1.103345