한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)
- Volume 17 Issue 7
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- Pages.747-753
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- 2004
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- 1226-7945(pISSN)
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- 2288-3258(eISSN)
초록
In this paper, nanocrystalline indium tin oxide (ITO) particles were fabricated by using synthesis without harmful elements. The synthetic method is to eliminate the chloridic and nitridic elements which are included in the current wet type synthetic method. Therefore, it is possible to lower synthetic temperature below 600
파일
참고문헌
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J. Solid State Chem.
v.135
Structural studies of tin-doped indium oxide (ITO) and In₄Sn₃
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