Substrate Bias Voltage Dependence of Electrical Properties for ZnO:Al Film by DC Magnetron Sputtering

Bias 전압에 따른 ZnO:Al 투명전도막의 전기적 특성

  • 박강일 (경성대학교 전기전자공학과) ;
  • 김병섭 (경성대학교 전기전자공학) ;
  • 임동건 (충주대학교 전자공학) ;
  • 이수호 (경성대학교 전기전자공학) ;
  • 곽동주 (경성대학교 전기전자공학과)
  • Published : 2004.07.01


Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.


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