Reactive Ion Etching Characteristics of 3C-SiC Grown on Si Wafers

Si(100)기판위에 성장된 3C-SiC 박막의 반응성 이온식각 특성

  • ;
  • ;
  • Shigehira Nishino (Kyoto Institute of Technology Electronics and Information Science)
  • 정귀상 (동서대학교 정보시스템공학부 메카트로닉스공학전공) ;
  • 정수용 (동서대학교 정보시스템공학부 메카트로닉스공학전) ;
  • Published : 2004.07.01


This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.


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