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Shallow P+-n Junction Formation and the Design of Boron Diffusion Simulator

박막 P+-n 접합 형성과 보론 확산 시뮬레이터 설계

  • 김재영 (한국항공대학교 전자정보통신컴퓨터공학부) ;
  • 이충근 (한국항공대학교 전자정보통신컴퓨터공학) ;
  • 김보라 (한국항공대학교 전자정보통신컴퓨터공학) ;
  • 홍신남 (한국항공대학교 전자정보통신컴퓨터공학부)
  • Published : 2004.07.01

Abstract

Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

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