The Development of Deep Silicon Etch Process with Conventional Inductively Coupled Plasma (ICP) Etcher

범용성 유도결합 플라즈마 식각장비를 이용한 깊은 실리콘 식각

  • 조수범 (인하대학교 정보통신공학과) ;
  • 박세근 (인하대학교 정보통신공학) ;
  • 오범환 (인하대학교 정보통신공학과)
  • Published : 2004.07.01


High aspect ratio silicon structure through deep silicon etching process have become indispensable for advanced MEMS applications. In this paper, we present the results of modified Bosch process to obtain anisotropic silicon structure with conventional Inductively Coupled Plasma (ICP) etcher instead of the expensive Bosch process systems. In modified Bosch process, etching step ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) step time is much longer than commercialized Bosch scheme and process transition time is introduced between process steps to improve gas switching and RF power delivery efficiency. To optimize process parameters, etching ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) time and ion energy effects on etching profile was investigated. Etch profile strongly depends on the period of etch / passivation and ion energy. Furthermore, substrate temperature during etching process was found to be an important parameter determining etching profile. Test structures with different pattern size have been etched for the comparison of the aspect ratio dependent etch rate and the formation of silicon grass. At optimized process condition, micropatterns etched with modified Bosch process showed nearly vertical sidewall and no silicon grass formation with etch rate of 1.2 ${\mu}{\textrm}{m}$/ min and the size of scallop of 250 nm.


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