A Study on the SAW Characteristics of the AIN Thin Film Prepared by Reactive RF Magnetron Sputtering System

반응성 RF 마그네트론 스퍼터로 증착한 AIN 박막의 물성 및 SAW소자 특성에 관한 연구

  • 고봉철 (울산대 공대 전기공학과) ;
  • 전순배 (울산대 공대 전기공학과) ;
  • 황영한 (경북전문대학) ;
  • 김재욱 (SD 윈테크) ;
  • 남창우 (울산대 공대 전기공학과) ;
  • 이규철 (울산대 공대 전기공학과)
  • Published : 2004.02.01


AIN thin film has been deposited on the $AI_2$$O_3$substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33[㏈]. SAW velocity of IDTs/AIN/$AI_2$$O_3$structure and IDTs/AIN/$AI_2$$O_3$/Si structure were about 5480[㎧]and 5040[㎧]respectively.


reactive RF magnetron sputter;AIN thin film;SAW device


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